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         With its properties of electrical insulation and excellent thermal conductivity, Aluminum Nitride (AlN) Ceramics is ideal for applications where heat dissipation is required. In addition, since it offers a coefficient of thermal expansion (CTE) near that of silicon, and excellent plasma resistance, it is used for semiconductor processing equipment components.

Performance Parameters

Property

Data

Thermal Conductitivy(W/m·K)

≥170

Dielectric Strength (1MHz)

8.8

Flexural Strength (MPa)

>300

Vickers Hardness (GPa)

11

Modules of Elasticity (Young) (GPa)

>200

water absorption (%)

0

Volume Resistivity (Ω·cm)20℃

>1014

Volume Resistivity (Ω·cm)300℃

109

Volume Resistivity (Ω·cm)500℃

107

Thermal Expansion Cofficient (/℃)

4-6×10-6

Density (g/cm3≥3.30
powder purityMetal impurity content≤0.05Wt%,oxygen content ≤1Wt%,carbon content≤0.05Wt%
Dielectric Strength (KV/mm)15-20

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Aluminum Nitride Ceramic Components Application:

• Components for semiconductor equipment

• IC packaging

• Thermal module substrate

• High power transistor module substrate

• High frequency device substrate

• Exothermic insulation board for Thyristor Modules

• Semiconductor laser, fixed substrate for light emitting diode (LED)

• Hybrid integrated module, ignition device module

• Used in the sintering of structural ceramics

• AlN Crucible for Metal Melting & Electronic cigarettes

• Applied to luminous materials

• Applied to the substrate material

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