Property | Data |
Thermal Conductitivy(W/m·K) | ≥170 |
Dielectric Strength (1MHz) | 8.8 |
Flexural Strength (MPa) | >300 |
Vickers Hardness (GPa) | 11 |
Modules of Elasticity (Young) (GPa) | >200 |
water absorption (%) | 0 |
Volume Resistivity (Ω·cm)20℃ | >1014 |
Volume Resistivity (Ω·cm)300℃ | 109 |
Volume Resistivity (Ω·cm)500℃ | 107 |
Thermal Expansion Cofficient (/℃) | 4-6×10-6 |
| Density (g/cm3) | ≥3.30 |
| powder purity | Metal impurity content≤0.05Wt%,oxygen content ≤1Wt%,carbon content≤0.05Wt% |
| Dielectric Strength (KV/mm) | 15-20 |
Aluminum Nitride Ceramic Components Application:
• Components for semiconductor equipment
• IC packaging
• Thermal module substrate
• High power transistor module substrate
• High frequency device substrate
• Exothermic insulation board for Thyristor Modules
• Semiconductor laser, fixed substrate for light emitting diode (LED)
• Hybrid integrated module, ignition device module
• Used in the sintering of structural ceramics
• AlN Crucible for Metal Melting & Electronic cigarettes
• Applied to luminous materials
• Applied to the substrate material